Evidence by Raman spectroscopy and x-ray diffraction of a strong influence of H2O traces on the metalorganic vapor phase epitaxy of GaAs on Si

Abstract

The metalorganic vapor phase epitaxy of GaAs on Si is shown to be strongly sensitive to the residual water vapor content in the growth reactor atmosphere. This finding is evidenced both by Raman spectroscopy and double-crystal x-ray diffraction. For the growth of good crystalline quality GaAs on Si, the upper hygrometric level limit is found around 0.5 ppm by volume.