Ultralow‐Threshold Laser Realized in Zinc Oxide

Abstract

Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer. The MgO layer can confine electrons in the ZnO layer, while holes can pass through the MgO layer and enter into the n-ZnO layer from the p-GaN layer. The threshold of the lasing action is as low as 0.8 mA..