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Graded composition and valence states in self-forming barrier layers at Cu–Mn/SiO2 interface
46
Citations
20
References
2010
Year
Materials ScienceSelf-forming Diffusion BarrierCu–mn/sio2 InterfaceEpitaxial GrowthEngineeringDiffusion ResistanceNanotechnologyChemical CompositionSurface ScienceApplied PhysicsSelf-forming Barrier LayersSemiconductor MaterialThin FilmsLayered MaterialValence StatesMno Layer
A self-forming diffusion barrier (SFB) layer was formed at Cu–Mn/SiO2 interface. Spatial variation of the chemical composition and valence state of the elements in the SFB was investigated in a subnanometer resolution using electron energy loss spectroscopy and transmission electron microscopy. The SFB was found to have a layered structure with graded compositions of nanocrystalline MnO and amorphous MnSiO3. The valence state of Mn was found to be +2 in the MnO layer and gradually increased to +3 in the MnSiO3 layer. The reported dielectric constant of the SFB could be explained by the observed composition and microstructure.
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