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Stable charge storage of m.a.o.s. diodes on GaAs by new anodic oxidation
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1977
Year
EngineeringAl2 O3 LayerStable Charge StorageSuch Composite OxidesSemiconductor DeviceNanoelectronicsCompound SemiconductorMaterials EngineeringMaterials ScienceElectrical EngineeringOxide ElectronicsNew Anodic OxidationGallium OxideMicroelectronicsElectrochemistryMetal AnodeNative-oxide AnodisationApplied PhysicsOptoelectronics
A method of native-oxide anodisation on GaAs, incorporating an Al2 O3 layer, is described. It is shown that such composite oxides on GaAs have superior electrical and physical characteristics to a system of native oxide only.