Electrophoretic Deposition of Glass Powder for Passivation of High Voltage Transistors

Abstract

Zinc borosilicate glass was electrophoretically deposited on silicon substrates in IPA solutions containing Y+++ and Mg++ additives. The deposition rate as well as the surface structure of deposits was greatly influenced by the Mg/Y ratio in the solution. Most of the deposits formed in the Y+++ ion‐rich solutions can be removed by rinsing, whereas the glass deposits formed in the Mg rich solutions are tightly attached to the substrates. Preferable deposits for filling of the moats between high voltage transistors are formed at .