de Haas-van Alphen measurements and the band structure of indium

Abstract

New de Haas-van Alphen measurements in indium are reported, in which emphasis is placed on very-low-frequency oscillations and on the effective masses of the carriers. A Fermi surface model is deduced and four orbit sizes from this model are used in fitting the four parameters of an empirical pseudopotential calculation. The resulting potentials are: V(111) = -0·7617 eV, V(002) = -0·280 eV, V(200) = +0·0922 eV λ (a spin-orbit parameter) = +0·1756 eV. The band structure and Fermi surface computed with these parameters are shown to be consistent with the majority of experimental data.