Thin polycrystalline SiGe films by aluminium‐induced layer exchange

Abstract

Recent results concerning the aluminium-induced crystallization of thin SiGe alloy films are reviewed. This crystallization process can be employed throughout the entire alloy range and results in polycrystalline material without a significant amount of phase separation. The structural, optical, and electronic properties of the polycrystalline SiGe films have been determined by a variety of techniques and for different Ge contents. The use of such films in thin film solar cells is discussed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)