Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal

Abstract

A Ga+Sb doping technique is proposed for reducing the dislocation density in LEC-InP crystals. Using SSMS and SIMS measurements, effective distribution coefficients of Ga and Sb in InP are estimated to be 3.35 and 0.12, respectively. Effectiveness of uniform Ga+Sb concentration doping all along the growth direction is presented. Nearly dislocation-free InP crystals 25 mm in diameter are prepared using Ga+Sb doping concentration above 6×10 18 cm -3 .