Ge₂Sb₂Te₅ Film Fabrication by Tellurization of Chemical Vapor Deposited GeSb

Abstract

This paper describes stoichiometric Ge 2 Sb 2 Te 5 (GST) film fabrication by the process based on chemical vapor deposition (CVD). GST films were fabricated by tellurization after GeSb CVD. This two step process enabled to fill high aspect holes. By applying appropriate precursors and process temperature, the surface morphology of the GST film was significantly improved. The moderate tellurization reaction process might contribute GST formation with maintaining the amorphous structure of the CVD GeSb. We believe this technique is useful for phase change memory application.