1.3 µm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates

Abstract

InGaAs/InAlGaAs strained quantum well lasers with 1.3 µm wavelength have been realized on In 0.31 Ga 0.69 As ternary substrates for the first time, owing to the increased indium composition of the substrates. A temperature-insensitive slope efficiency of -0.007 dB/K has been observed. The threshold current density ( J th ) at 20°C and characteristic temperature ( T 0 ) are 677 A/cm 2 and 76 K, respectively. The dependence of T 0 on J th per well suggests that higher T 0 would be achieved by fabricating the lasers on InGaAs substrates of improved quality, thereby decreasing J th .