Semi-insulating InP co-doped with Ti and Hg

Abstract

The authors have grown semi-insulating InP ingots co-doped with Ti and Hg. The compensation mechanism is the following: the holes due to the shallow Hg acceptor are compensated by the titanium-related deep donor level situated at about Ec-0.5 eV (T approximately=300 K). Temperature-dependent Hall effect measurements are consistently interpreted using concentration data from SSMS and SIMS measurements. In these samples a Ti-related EPR signal is detected (g=1.94 and Delta BPP=450 G) and attributed to resonance into the 2E ground state of Ti3+.