Electrical Properties of <i>n</i>- and <i>p</i>-Type Gallium Arsenide

Abstract

Measurements of transport properties are reported on n -type GaAs with carrier concentrations of ∼10 14 cm -3 and ∼10 15 cm -3 and on p -type GaAs with carrier concentration of ∼10 16 cm -3 converted from n -GaAs by heat treatments. The Hall coefficient and the resistivity have been measured as functions of temperature from 53°K to 400°K for n - and p -type samples and the resistivity has been measured as a function of hydrostatic pressure up to 15Kbar for n -type samples. The variations in the carrier concentration are explained by the presence of non-shallow donors of ionization energy ∼(0.2+1.05×10 -5 P (bar))eV and ∼(0.14+1.2×10 -5 P (bar))eV in n -GaAs, and that of non-shallow acceptors having ionization energy of 0.12 eV in p -GaAs, For n -GaAs, scatterings due to polar mode, ionized impurities and “space charge” regions produced by inhomogeneities play important roles in determining the mobility. For p -GaAs, polar optical mode scattering is the most dominant scattering mechanism and deformation potential and ionized impurity scatterings are possibly effective.