2006 · 30 citations · 5 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsPower ElectronicsHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesModulationPower AmplifiersRadio-frequency Integrated CircuitsUltra-wideband CommunicationAmplitude ModulationClass E AmplifiersClass E Power AmplifiersEfficiencyHigh-efficiency Power AmplifiersModulation LinearityPower Amplifier DesignRadio Frequency Power Amplifiers
The power amplifier described here uses a 50-V gemini MOSFET and operates in class E to produce up to 200 W from 1.8 to 128 MHz. The circuit incorporates a broadband input so that frequency changes require only retuning or switching of the output filter. The efficiency varies from 90 percent at 1.8 MHz to 70 percent at 128 MHz. The amplitude-modulation linearity is excellent, making it well suited for use in a Kahn-technique (EER) transmitter
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RF and Microwave Power Amplifier and Transmitter Technologies — Part 1
Frederick H. Raab, P.M. Asbeck, Steve Cripps et al. · 2003 · 107 citations
Drive modulation in Kahn-technique transmitters
Frederick H. Raab · 2003 · 42 citations