AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide

Abstract

AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. A very large gate swing voltage is applied. An AlGaN/GaN MOS heterostructure FET with saturation characteristics is observed. For a gate length of 2 µm in a 5 µm channel opening with a gate width of 100 µm, MOSHFET with transconductance and maximum drain current of 78 mS/mm and 720 mA/mm, respectively, is achieved.