Calculated moments for the implantation of boron into silicides

Abstract

The Monte Carlo computer program trim is used to calculate the projected range, the standard deviation, the skewness, and the kurtosis of implanted boron ion distributions in silicon, silicon dioxide, molybdenum disilicide, tantalum disilicide, titanium disilicide, and tungsten disilicide. The boron implantation energy ranges from 10 to 500 keV.