Energy-Efficient Artificial Synapses Based on Flexible IGZO Electric-Double-Layer Transistors

Abstract

Flexible low-voltage indium-gallium-zincoxide (IGZO) electric-double-layer transistors are fabricated on polyethylene terephthalate substrates at room temperature and proposed for energy-efficient artificial synapse application. The IGZO channel conductance and the gate voltage pulse are regarded as synaptic weight and synaptic spike, respectively. The energy consumption of our IGZO synaptic transistor is estimated to be as low as ~0.23 pJ/spike. Short-term synaptic plasticity and high-pass filtering behaviors are also mimicked in an individual IGZO synaptic transistor.