High Quality Area-Selective Atomic Layer Deposition Co Using Ammonia Gas as a Reactant

Abstract

Atomic layer deposition (ALD) Co was developed using bis(-diisopropylacetamidinato)cobalt(II) as a precursor and as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to , the Co films were also deposited by using gas as a reactant. Compared to ALD Co using , the Co thin films deposited by showed a higher film quality, a lower resistivity, and a higher density. The Co thermal ALD process was applied to area-selective ALD using an octadecyltrichlorosilane self-assembled monolayer as a blocking layer, which produced wide Co line patterns without an etching process.