Defect structure and evolution in silicon carbide irradiated to 1 dpa-SiC at 1100 °C - Concepedia

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Defect structure and evolution in silicon carbide irradiated to 1 dpa-SiC at 1100 °C

71

Citations

21

References

2003

Year

David J. Senor, G.E. Youngblood, L.R. Greenwood, D.V. Archer, David Alexánder, M.C Chen, G.A. Newsome

Journal of Nuclear Materials

Materials EngineeringMaterials ScienceEngineeringApplied PhysicsSilicon CarbideSemiconductor Device FabricationStructural CeramicDefect StructureCarbide

References

	Year	Citations

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