Velocity of Domain-Wall Motion Induced by Electrical Current in the Ferromagnetic Semiconductor (Ga,Mn)As

Michihiko Yamanouchi, Daichi Chiba, F. Matsukura, T. Dietl, Hideo Ohno

Physical Review Letters · 2006 · 239 citations · 27 references

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Abstract

Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

References

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