Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric, Asymmetric, and Independent-Gate-Operation Modes

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> A generic carrier-based core model for undoped four-terminal double-gate (DG) MOSFETs has been developed and is presented in this paper. The model is valid for symmetric, asymmetric, and independent-gate-operation modes. Based on the exact solution of the 1-D Poisson's equation in a general DG MOSFET configuration, a rigorous derivation of the drain–current equations from the Pao–Sah's double integral has been performed. By using the channel carriers as the intermediate variable, a very compact analytical drain–current expression can be obtained. The model is extensively verified by comparisons with a 2-D numerical simulator under a large number of biasing conditions. The concise mathematical formulation allows the unification of various DG models into a carrier-based core model for a compact DG MOSFET model development. </para>