Nanotechnology · 2007 · 38 citations · 21 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin Film StrainThin-film TransistorsElectrical PropertiesElectrical Properties AnalysisFlexible ElectronicsFlexible Thin-film ElectronicsFlexible Thin-film TransistorsNanocrystalsStrain Effects On Electronic PropertiesTransparent Thin-film Transistors
Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ∼10(3) and a field-effect mobility of 4.1 cm(2) V(-1) s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ∼10(3) and a field-effect mobility of 4.0 cm(2) V(-1) s(-1).
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