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Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratio

Materials ScienceMaterials EngineeringElectrical EngineeringLow-pressure MovpeEngineeringWide-bandgap SemiconductorApplied PhysicsZinc- Blende GanGan Power DeviceHigh TemperatureCompound Semiconductor