Facet modulation selective epitaxy−a technique for quantum-well wire doublet fabrication

Abstract

The technique of facet modulation selective epitaxy and its application to quantum-well wire doublet fabrication are described. Successful fabrication of wire doublets in the AlxGa1−xAs material system is achieved. The smallest wire fabricated has a crescent cross section less than 140 Å thick and less than 1400 Å wide. Backscattered electron images, transmission electron micrographs, cathodoluminescence spectra, and spectrally resolved cathodoluminescence images of the wire doublets are presented.