Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy

Abstract

Epitaxial layers of ZnxCd1−xTe have been grown on InSb, CdTe, and HgCdTe substrates by the technique of molecular beam epitaxy (MBE). Composition has been varied over the range 0≤x≤0.9 by adjusting the temperatures of furnaces containing elemental Zn and polycrystalline CdTe. Oscillation and Weissenberg x-ray patterns indicate that layers are single phase and single crystal for low values of misfit between layer and substrate. Near band-edge emission is dominant in the photoluminescence spectrum of layers grown at substrate temperatures near 200 °C.