Chemistry - A European Journal · 1996 · 97 citations · 38 references
EngineeringMaterials EngineeringMaterials ScienceInorganic ChemistryMaterials ChemistrySemiconductor MaterialsCompound SemiconductorsIi-vi SemiconductorsInorganic MaterialsMetal SulfidesTwo-dimensional SemiconductorsWide Band Gap SemiconductorsBand Gaps In Periodic StructuresCadmium SelenideChalcogenide Host MaterialsChalcogenide SynthesisLayered Metal SulfidesTernary Metal SulfidesTransition Metal DichalcogenidesTransition Metal Sulfides
Abstract The synthesis of the isomorphous, layered chalcogenides K 2 Cd 3 S 4 ( I ), Rb 2 Cd 3 S 4 ( II ), K 2 Cd 3 Se 4 ( III ), Rb 2 Cd 3 Se 4 ( IV ), and K 2 Cd 3 Te 4 ( V ) in molten A 2 Q x fluxes in reported (A = K, Rb; Q = S, Se, Te; x = 2 to 3). The compounds form as (Cd 3 Q 4 ) layers interspersed with A + cations; the layers are composed of Cd 3 Q 2− 4 units shaped as truncated cubes. The compounds have room‐temperature band gaps of 2.75, 2.92, 2.36, 2.37, and 2.26 eV for I, II, III, IV , and V , respectively, and also display strong photoluminescence. The thermal analysis data for all compounds are reported. The properties of these compounds are compared with those of the three‐dimensional compounds CdS, CdSe, and CdTe, as well as those of the nanometer‐sized CdQ clusters. A conceptual context is presented to connect all these different types of compounds.
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