Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxy - Concepedia

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Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxy

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1987

Year

Yoshinobu Aoyagi, Atsutoshi Doi, Souhachi Iwai, Susumu Namba

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceAtomic-layer EpitaxySelective DecompositionEngineeringAtomic-layer GrowthApplied PhysicsSelective Decomposition MechanismLaser-assisted DepositionMolecular Beam EpitaxyPulsed Laser DepositionEpitaxial GrowthOptoelectronicsCompound Semiconductor

Abstract

Atomic-layer epitaxy (ALE) including self-arresting deposition mechanism at 100% surface coverage is realized in GaAs by a modulated-continuous-wave laser metal-organic vapor-phase epitaxy technique. Selective decomposition of trimethylgallium (TMG) or triethylgallium (TEG) on an As-atom layer by laser irradiation is an important mechanism to realize the ALE. The experimental results are well-explained by a calculation based on this selective decomposition mechanism.