Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 70 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAtomic Layer DepositionEpitaxial GrowthLaser Surface ProcessingSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor SurfacesAtomic Layer EpitaxyEpitaxial Film GrowthEpitaxial Growth KineticsLayer-by-layer Growth
Atomic-layer epitaxy (ALE) including self-arresting deposition mechanism at 100% surface coverage is realized in GaAs by a modulated-continuous-wave laser metal-organic vapor-phase epitaxy technique. Selective decomposition of trimethylgallium (TMG) or triethylgallium (TEG) on an As-atom layer by laser irradiation is an important mechanism to realize the ALE. The experimental results are well-explained by a calculation based on this selective decomposition mechanism.