Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing - Concepedia

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Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing

16

Citations

12

References

2010

Year

Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Yen-Ting Chiang, F JUANG, Chien-Ting Lin, Chien-Ming Lai

Microelectronics Reliability

Electrical EngineeringEngineeringTddb ReliabilityBias Temperature InstabilityApplied PhysicsSemiconductor Device FabricationMicroelectronicsSemiconductor DeviceOxygen Post Deposition

References

	Year	Citations

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