Physical Review B · 2011 · 118 citations · 27 references
EngineeringChemistryMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesDisplay TechnologiesLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsOrganic SemiconductorsCurrent DensityCurrentsElectroluminescenceFluorescent MaterialsOrganic Light-emitting DiodesPulsed OperationRise TimeTriplet-state Dynamics
We investigate organic light-emitting diodes (OLEDs) comprising the singlet emitter system 4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran (DCM) doped into aluminium tris(8-hydro-xyquinoline) (Alq${}_{3}$) at high excitation densities. With the OLED active area reduced to $100\ifmmode\times\else\texttimes\fi{}100\phantom{\rule{0.28em}{0ex}}\ensuremath{\mu}$m${}^{2}$, current densities up to 800 A/cm${}^{2}$ are achieved in pulsed operation. These devices exhibit an intense electroluminescence (EL) turn-on peak on the nanosecond time scale. With the help of streak camera measurements, we prove that the steady state EL of the fluorescent OLEDs is reduced due to singlet-triplet quenching. We demonstrate that short electrical pulses with a rise time of 10 ns make the separation of singlet emission and singlet-triplet quenching in time domain possible. By modeling the singlet and triplet population dynamics in the emission layer, we find that the triplet-triplet annihilation-rate coefficient in doped fluorescent materials is triplet-density dependent at high excitation density. The increased triplet lifetime usually observed in host:guest systems due to triplet trapping on guest molecules vanishes at high current densities. An increase in current density leads to an increased triplet-triplet annihilation rate, while the triplet density in the emission layer stays constant.
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Laser action in organic semiconductor waveguide and double-heterostructure devices
V. G. Kozlov, Vladimir Bulović, P. E. Burrows et al. · Nature · 1997 · 490 citations