The Structural and Electrical Properties of CuNi Thin-Film Resistors Grown on AlN Substrates for Π-Type Attenuator Application

Abstract

A constantan composition of showing a near-zero temperature coefficient of resistance (TCR) value was obtained on AlN substrates using a Ni power of and a Cu power of by dc magnetron cosputtering. The grain size increases and resistivity of the films decreases with increasing deposition temperature. The crystallinity of the films definitely influences the TCR value, which is an important parameter in resistor devices. The films deposited at exhibited a near-zero TCR value of approximately and the positive TCR values increased with increasing deposition temperature. The films deposited above do not exhibit irreversibility of the resistance with increasing deposition temperature.