Use of Phosphine as an n-Type Dopant Source for Vapor−Liquid−Solid Growth of Silicon Nanowires

Abstract

Phosphine (PH3) was investigated as an n-type dopant source for Au-catalyzed vapor-liquid-solid (VLS) growth of phosphorus-doped silicon nanowires (SiNWs). Transmission electron microscopy characterization revealed that the as-grown SiNWs were predominately single crystal even at high phosphorus concentrations. Four-point resistance and gate-dependent conductance measurements confirmed that electrically active phosphorus was incorporated into the SiNWs during VLS growth. A transition was observed from p-type conduction for nominally undoped SiNWs to n-type conduction upon the introduction of PH3 to the inlet gas. The resistivity of the n-type SiNWs decreased by approximately 3 orders of magnitude as the inlet PH3 to silane (SiH4) gas ratio was increased from 2 x 10(-5) to 2 x 10(-3). These results demonstrate that PH3 can be used to produce n-type SiNWs with properties that are suitable for electronic and optoelectronic device applications.