System for reflection electron microscopy and electron diffraction at intermediate energies

Abstract

A system employing medium energy electrons (1–15 keV) for scanning microscopy and diffraction intensity measurements has been constructed. The specimen is situated in an UHV environment and can be cleaned by argon ion sputtering and heated up to 1000 °C. The resolution is currently about 300 Å for scanning images formed when secondary electrons are detected. The use of diffracted beams to form images is shown to provide new types of information regarding the structure and defects of crystal surfaces. Intensities and intensity profiles of diffracted beams can be measured for comparison with theoretical data and structure analysis.