Publication | Closed Access
Optimization of Pt tip field emitter array fabricated using focused ion and electron beams
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Citations
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References
2003
Year
Electrical EngineeringIon ImplantationEngineeringEmitter HeightElectron-beam LithographyNanotechnologyApplied PhysicsFocused IonIon BeamSemiconductor Device FabricationElectron BeamsIon EmissionMicroelectronicsOptoelectronics
Au-gated Pt field emitter arrays were fabricated using focused ion and electron beams in a Au/SiO2/Si layer. Pt emitters with different heights were studied to optimize the emission current. The emitter height should be adjusted to the top-surface level of the gate electrode for optimization of emission behavior. An emission angle of about 5°–10° was obtained. A prototype of a single-emitter electron source was also fabricated using electron-beam induced metal and insulator depositions.
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