Journal of the American Chemical Society · 2013 · 495 citations · 27 references
EngineeringChemistryMaterials ScienceNanomaterialsNanotechnologySemiconductor MaterialsNanoelectronicsNanostructured Electronic MaterialsOrganic SemiconductorsSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor Thin FilmsAttachment MechanismsBand GapBand Gap DeterminationNanosheetsOptoelectronic PropertiesSemiconductor Band Gap DeterminationSemiconductor NanostructuresSize
Single-layer single-crystalline SnSe nanosheet with four-atomic thickness of ~1.0 nm and lateral size of ~300 nm is presented here by using a one-pot synthetic method. It is found that 1,10-phenanthroline plays an important role in determining the morphology of the SnSe product as three-dimensional SnSe nanoflowers are obtained in the absence of 1,10-phenanthroline while keeping other reaction parameters the same. The evolution process study discloses that single-crystalline nanosheets are obtained from the coalescence of the SnSe nucleus in an orientated attachment mechanism. Band gap determination and optoelectronic test based on hybrid films of SnSe and poly(3-hexylthiophene) indicate the great potential of the ultrathin SnSe nanosheets in photodector and photovoltaic, and so forth.
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