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Sensitive high-<i>T</i> <i>c</i> transition edge bolometer on a micromachined silicon membrane
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1995
Year
EngineeringIntegrated CircuitsThermal OptimizationQuantum SensingSilicon On InsulatorDetector PhysicsSensor TechnologyMicro-electromechanical SystemQuantum EngineeringMicromachinesSuperconductivityInstrumentationSuperconducting DevicesQuantum ScienceElectrical EngineeringPhysicsTransition Edge BolometersThermal PhysicsMicromachined Silicon MembranesMicroelectronicsMicro TechnologyOptical SensorsMicromachined Silicon MembraneQuantum TechnologyMicrofabricationApplied PhysicsDetector Physic
Superconducting transition edge bolometers on micromachined silicon membranes have been fabricated. The optical response is 580 V/W at a time constant of 0.4 ms. The detectivity D* is 3.8×109 (cm Hz1/2 W−1) at a temperature of 84.5 K and within the frequency regime 100&lt;f&lt;300 Hz. This is one of the fastest composite type bolometers ever reported. Upon thermal optimization, this type of detector should be competitive with state-of-the-art quantum detectors.