Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow

Abstract

This paper deals with a model of silicon oxidation including stress relaxation by viscous flow during growth. Based on a Deal–Grove process and a Maxwellian stress relaxation approach, an integrodifferential equation giving the inverse growth rate dt/deox vs eox is established. Valid in any case of thickness growth rate dependence, it allows us to fit dry silicon oxidation data on a wide range of oxidation temperature (780–980 °C).