Journal of Applied Physics · 1981 · 36 citations · 4 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramicsElectronic MaterialsNanomaterialsImplant MaterialsImplant TechnologyIon ImplantationAnisotropyBubble FormationBubble GrowthGrowth AnisotropyImplantation Through Thin FilmsIon Implantation EffectsMaterial Behaviour At Elevated TemperaturesPost-implantation Annealing
Measurements of anisotropy in implanted bubble films indicate that in addition to straining the lattice, implantation also has the effect of suppressing the growth-induced anisotropy. After annealing at 1000 °C, most of the as-grown anisotropy is restored, which points to oxygen defects as the most likely mechanism for the effect. The Curie temperature has been found to be lowered by as much as 70 °C by implantation at a typical device dose, and the anisotropy of the implanted layer varies quite rapidly with temperature at elevated temperatures. The results indicate that with proper choice of material parameters and implantation conditions safisfactory bubble propagation can be obtained in high density small bubble diameter devices based on ion-implanted propagation patterns over a wide temperature range.
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