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On the CdS/CuInSe2 conduction band discontinuity
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1995
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Ii-vi SemiconductorElectrical EngineeringEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum MaterialsCb MinimumSemiconductor MaterialElectrical PropertyThermionic EmissionCharge Carrier TransportSolar CellsCharge TransportCompound SemiconductorPhotovoltaicsElectron Affinity Difference
Recent calculations of the electron affinity difference between CdS and CuInSe2 indicate that the conduction band (CB) minimum of CuInSe2 is below the CB minimum of CdS. As a consequence, a spike occurs in the CB at the CdS/CuInSe2 interface. Such a spike is commonly considered as in conflict with good photovoltaic performance of heterojunction solar cells. It is outlined here that the simple assumption of thermionic emission across the junction can explain an unimpeded electron transport in the case of an n+p structure (n-type window, p-type absorber), even when a spike in the CB occurs.