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High-efficiency avalanche-diode oscillators and amplifiers in X-band

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References

1970

Year

Abstract

High-efficiency pulsed microwave amplification and oscillation have been obtained at X-band using punch-through silicon p-n junction diodes mounted in a ridged waveguide. Peak powers of 20 W at 30 percent efficiency were measured at 8.6 GHz.

References

YearCitations

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