Publication | Closed Access
Strain-Fields Effects and Reversal of the Nature of the Fundamental Valence Band of ZnO Epilayers
54
Citations
15
References
2001
Year
Materials ScienceWide-bandgap SemiconductorFundamental Valence BandIi-vi SemiconductorEngineeringPhysicsOxide ElectronicsGan EpilayersCondensed Matter PhysicsApplied PhysicsQuantum MaterialsAluminum Gallium NitrideMaterial PhysicGallium OxideCategoryiii-v SemiconductorElectronic StructureStrain-fields EffectsZno Epilayers
We examine the influence of strain fields in ZnO epilayers. We show that a reversal of the nature of the fundamental valence band can be observed similarily to what was reported in GaN epilayers.
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