Polishing of optoelectronic components made of monocrystalline silicon carbide

Abstract

The authors of this paper have substantiated the appropriateness of application of polishing suspensions of diamond micron powders, boron nitride and Ti3AlC2 MAX-phase powders in the study of the mechanism of polishing monocrystalline silicon carbide. They have proved suitability of using the following parameters as criteria for efficiency of the machining process: the specific value of the energy of transfer, the density of the energy of transfer, and the density of vibrational energy spent for the formation of debris particles. Computer modeling of the polished surface micro- and nanoprofile produced the profile charts from which the surface roughness parameters have been determined and the characteristic relations between the parameters and the most probable debris particle size have been defined.