Band engineering at interfaces: theory and numerical experiments

Abstract

Understanding the mechanisms which determine the band offsets and Schottky barriers at semiconductor contacts and engineering them for specific device applications are important theoretical and technological challenges. In this review, we present a theoretical approach to the band-line-up problem and discuss its application to prototypical systems. The emphasis is on ab initio computations and on theoretical models derived from first-principles numerical experiments. An approach based on linear-response-theory concepts allows a general description of the band alignment for various classes of semiconductor contacts and predicts the effects of various bulk and interfacial perturbations on the band discontinuities.