Au/Pt/Ti/Ni ohmic contacts to <i>p</i> -ZnTe

Abstract

Ohmic contacts of Au/Pt/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10-6 Ω cm2 for a p-type doping level of 3 × 1019 cm-3 and at an annealing temperature of 300°C. The Ni and Ti layers are very effective in improving the electrical properties of these contacts.