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Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process

Power Algan/gan HemtsElectrical EngineeringEngineeringRf SemiconductorApplied PhysicsPower Semiconductor DeviceAluminum Gallium NitrideGan Power DeviceBreakdown Failure MechanismsPower ElectronicsMicroelectronicsRf Compatible ProcessCategoryiii-v Semiconductor