A 50-110 GHz ohmic contact RF MEMS silicon switch with high isolation

Abstract

This paper presents the new concept of RF MEMS silicon contact switch and its verification for high isolation at 50-110 GHz. A high isolation is achieved by locating the floating top contact electrode 30 ¿m apart from the bottom coplanar waveguide (CPW) signal line in lateral direction at initial off-state. The switch contact is realized by the dual axis movement, namely a lateral movement by comb electrodes and a following vertical movement by a bottom electrode. The actuation voltages are measured for dual axis movement. The isolation of the switch was measured at 50-110 GHz to prove the concept of isolation improvement using dual axis movement.