Surface Transport in Semiconductors

Abstract

A transport theory is given for electrons and holes in space-charge layers at semiconductor surfaces. For diffuse surface scattering, the effective surface mobilities may differ significantly from the bulk mobility for any strength of space-charge layer. Agreement with Schrieffer's formulas is found only for strong space-charge layers, and the discrepancy is explained. The results are extended to cover an arbitrary degree of diffuseness of surface scattering and to cover samples of small thickness.