Atomic-layer epitaxy of (111)CdTe on BaF2 substrates

Abstract

Atomic-layer epitaxy of (111)CdTe single crystalline films on (111)BaF2 substrates is investigated. It is shown that a set of growth parameters exists in which the average growth per cycle of opening and closing the shutters of the constituent element sources is one monolayer. In a substrate temperature range between 260 and 285 °C the growth process is self-regulative, that means, it is independent of the Te beam intensity and the substrate temperature. At substrate temperatures higher than 285 °C growth is still self-regulative, but the average growth rate per cycle is less than one monolayer.