Role of oxygen in AlN sublimation growth

Abstract

The effect of oxygen on AlN sublimation growth is examined theoretically. Closed-box thermodynamic calculations predict a number of volatile Al–O compounds to be formed in the vapor at high temperatures. However, these compounds produce a negligible effect on the crystal growth rate in the temperature range of interest. The analysis also shows that Al2O3 inclusions may be generated on the AlN surface due to the presence of oxygen in the vapour. The latter effect is found to be especially pronounced at moderate temperatures. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)