Structural and Optical Properties of α-Ga2O3 Films Deposited on Sapphire (10‾10) and (01‾12) Substrate by MOCVD

Abstract

Ga 2 O 3 thin films were grown on sapphire m-cut () and r-cut () orientations substrates at different temperatures by metal-organic chemical vapor deposition. Structural and optical properties of the Ga 2 O 3 films were investigated including the influence by annealing for the obtained films. The Ga 2 O 3 films on sapphire () and () substrate are α -Ga 2 O 3 . The crystallization of the films decreases after annealed at 900 °C. The average transmittance of the samples in the visible wavelength range was over 86% and the optical band gap Eg was about 4.755.15 eV. The Eg of the samples increases after annealing at 900 °C.