Hall Effect and Conductivity of InSb

Abstract

Hall coefficient and conductivity of single-crystal InSb have been measured from 1.3\ifmmode^\circ\else\textdegree\fi{}K to 700\ifmmode^\circ\else\textdegree\fi{}K. Impurity band conduction and an acceptor ionization energy of 7\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}3}$ ev have been observed in $p$-type InSb at low temperature. Variation of ${R}_{H}$ with $H$ indicates a complicated valence band structure. Effective masses of $0.015m$ for electrons and approximately $0.17m$ for holes are consistent with mobility and low temperature Hall effect data. Lattice scattering mobilities are proportional to ${T}^{\ensuremath{-}1.68}$ for electrons and approximately ${T}^{\ensuremath{-}2.1}$ for holes. The intrinsic carrier concentration product is given by $np=3.6\ifmmode\times\else\texttimes\fi{}{10}^{29}{T}^{3}\mathrm{exp}(\ensuremath{-}\frac{0.26}{\mathrm{kT}})$ above 200\ifmmode^\circ\else\textdegree\fi{}K. ${E}_{g}$ at 0\ifmmode^\circ\else\textdegree\fi{}K is between 0.26 and 0.29 ev.