Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults - Concepedia

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Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults

13

Citations

12

References

2004

Year

B. J. Skromme, L. Chen, M. K. Mikhov, Hisanori Yamane, Masato Aoki, Francis J. DiSalvo

Materials science forum

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceStacking FaultsEv Luminescence BandCategoryiii-v SemiconductorOptoelectronics

References

	Year	Citations

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